High-speed programming of nanowire-gated carbon-nanotube memory devices

Small

Volumn 6, Issue 23, 2010, Pages 2659-2663

  Agnus, Guillaume ^a   Filoramo, Arianna ^a   Lenfant, Stéphane ^b   Vuillaume, Dominique ^b   Bourgoin, Jean Philippe ^a   Derycke, Vincent ^a  

^a DIF   (France)

^b INSTITUT D ELECTRONIQUE   (France)

Author keywords

carbon nanotubes; field effect transistors; memory devices; nanowires; optoelectronics

Indexed keywords

ADAPTIVE CIRCUIT; HIGH-SPEED PROGRAMMING; MEMORY DEVICE; NANOTUBE MEMORY DEVICES; NON-VOLATILE MEMORIES; OPTOELECTRONICS; PROGRAMMING SPEED; RETENTION MECHANISM; SCALING RULES; SILICON NANOWIRES; SUB-MICROSECOND;

CARBON NANOTUBES; FLASH MEMORY; NANOWIRES;

FIELD EFFECT TRANSISTORS;

CARBON NANOTUBE; NANOWIRE;

ARTICLE; COMPUTER; INSTRUMENTATION; NANOTECHNOLOGY;

NANOTECHNOLOGY; NANOTUBES, CARBON; NANOWIRES; OPTICAL STORAGE DEVICES;

EID: 78649952885     PISSN: 16136810     EISSN: 16136829     Source Type: Journal    
DOI: 10.1002/smll.201001293     Document Type: Article

References (28)

1. P. Avouris, Z. Chen, V. Perebeinos, Nat. Nanotechnol. 2007, 2, 605.
2. C. Rutherglen, D. Jain, P. Burke, Nat. Nanotechnol. 2009, 4, 811.
3. L. Marty, A.-M. Bonnot, A. Bonhomme, A. Iaia, C. Naud, E. André, V. Bouchiat, Small 2006, 2, 110.
4. A. Gruneis, M. J. Esplaniu, D. Garcia-Sanchez, A. Bachtold, Nano Lett. 2007, 7, 3766.
5. M. S. Fuhrer, B. M. Kim, T. Dürkop, T. Brintlinger, Nano Lett. 2002, 2, 755.
6. M. Radosavljevic, M. Freitag, K. V. Thadani, A. T. Johnson, Nano Lett. 2002, 2, 761.
7. J. B. Cui, R. Sordan, M. Burghard, K. Kern, Appl. Phys. Lett. 2002, 81, 3260.
8. W. B. Choi, S. Chae, E. Bae, J. W. Lee, B. H. Cheong, J. R. Kim, J. J. Kim, Appl. Phys. Lett. 2002, 82, 275.
9. M. Rinkio, A. Johansson, G. S. Paraoanu, P. Torma, Nano Lett. 2009, 9, 643.
10. A. Star, L. Yu, K. Bradley, G. Gruner, Nano Lett. 2004, 4, 1587.
11. J. Borghetti, V. Derycke, S. Lenfant, P. Chenevier, A. Filoramo, M. Goffman, D. Vuillaume, J.-P. Bourgoin, Adv. Mater. 2006, 18, 2535.
12. K. S. Narayan, M. Rao, R. Zhang, P. Maniar, Appl. Phys. Lett. 2006, 88, 243507.
13. C. Anghel, V. Derycke, A. Filoramo, S. Lenfant, B. Giffard, D. Vuillaume, J.-P. Bourgoin, Nano Lett. 2008, 8, 3619.
14. G. Agnus, W. S. Zhao, V. Derycke, A. Filoramo, Y. Lhuillier, S. Lenfant, D. Vuillaume, C. Gamrat, J.-P. Bourgoin, Adv. Mater. 2010, 22, 702.
15. S. Liu, J. Ye, Y. Cao, Q. Shen, Z. Liu, L. Qi, X. Guo, Small 2009, 5, 2371.
16. S. Liu, J. Li, Q. Shen, Y. Cao, X. Guo, G. Zhang, C. Feng, J. Zhang, Z. Liu, M. L. Steigerwald, D. Xu, C. Nuckolls, Angew. Chem. Int. Ed. 2009, 48, 4759.
17. Y. Li, T. Kaneko, Y. Hirotsu, R. Hatakeyama, Small 2010, 6, 27.
18. Y. Shi, W. Fang, K. Zhang, W. Zhang, L.-J. Li, Small 2009, 5, 2005.
19. C. B. Winkelmann, I. Ionica, X. Chevalier, G. Royal, C. Bucher, V. Bouchiat, Nano Lett. 2007, 7, 1454.
20. M.-Y. Chiu, C.-C. Chen, J.-T. Sheu, K.-H. Wei, Org. Electron. 2009, 10, 769.
21. W. S. Zhao, G. Agnus, V. Derycke, A. Filoramo, J.-P. Bourgoin, C. Gamrat, Nanotechnology 2010, 21, 175202 and Nanotechnology 2010, 21, 259801 (corrigendum).
22. S.-Y. Liao, J.-M. Retrouvey, G. Agnus, W. S. Zhao, C. Maneux, S. Frégonèse, T. Zimmer, D. Chabi, J.-O. Klein, V. Derycke, A. Filoramo, C. Gamrat, unpublished.
23. J. Appenzeller, Y.-M. Lin, J. Knoch, P. Avouris, Phys. Rev. Lett. 2004, 93, 196805.
24. G. Robert, V. Derycke, M. F. Goffman, S. Lenfant, D. Vuillaume, J.-P. Bourgoin, Appl. Phys. Lett. 2008, 93, 143117.
25. S. Auvray, V. Derycke, M. F. Goffman, A. Filoramo, O. Jost, J.-P. Bourgoin, Nano Lett. 2005, 5, 451.
26. P. Collins, M. Arnold, P. Avouris, Science 2001, 292, 706.
27. V. Derycke, S. Auvray, J. Borghetti, C.-L. Chung, R. Lefèvre, A. Lopez-Bezanilla, K. Nguyen, G. Robert, G. Schmidt, C. Anghel, N. Chimot, S. Lyonnais, S. Streiff, S. Campidelli, P. Chenevier, A. Filoramo, M. F. Goffman, L. Goux-Capes, S. Latil, X. Blasé, F. Triozon, S. Roche, J.-P. Bourgoin, C. R. Phys. 2009, 10, 330.
28. 2 Interface (Eds:, C. R. Helms, B. E. Deal,), Plenum Press, New York 1988.