An optical programming/electrical erasing memory device: Organic thin film transistors incorporating core/shell CdSe@ZnSe quantum dots and poly(3-hexylthiophene)

Organic Electronics

Volumn 10, Issue 5, 2009, Pages 769-774

  Chiu, Mao Yuan ^a   Chen, Chen Chia ^a   Sheu, Jeng Tzong ^a   Wei, Kung Hwa ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

Conjugated polymers; Core shell; Memory; Organic thin film transistor; Quantum dot

Indexed keywords

CADMIUM COMPOUNDS; CARRIER MOBILITY; CHEMICAL SENSORS; CONJUGATED POLYMERS; DATA STORAGE EQUIPMENT; FIELD EFFECT TRANSISTORS; II-VI SEMICONDUCTORS; NANOCRYSTALS; PHOTOTRANSISTORS; SEMICONDUCTING ORGANIC COMPOUNDS; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WELLS; THIN FILM TRANSISTORS; THIN FILMS;

CORE/SHELL; GATE VOLTAGES; MEMORY PERFORMANCE; ON STATE CURRENT; ON/OFF RATIO; ORGANIC THIN FILM TRANSISTORS; POLY-3-HEXYLTHIOPHENE; ZNSE QUANTUM DOTS;

THIN FILM CIRCUITS;

EID: 67649213559     PISSN: 15661199     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.orgel.2009.03.011     Document Type: Article

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