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Volumn 4, Issue 9, 2004, Pages 1587-1591

Nanotube optoelectronic memory devices

Author keywords

[No Author keywords available]

Indexed keywords

CARBON; POLYMER;

EID: 4644273768     PISSN: 15306984     EISSN: None     Source Type: Journal    
DOI: 10.1021/nl049337f     Document Type: Article
Times cited : (201)

References (25)
  • 15
    • 4644318346 scopus 로고    scopus 로고
    • note
    • Electronic measurements of NT-FET devices, such as current flow between S/D electrodes as a function of applied gate voltage, were conducted using a semiconductor parameter analyzer (Keithley 4200). Gate voltages were swept at 4 Hz. The carbon nanotube packaged devices were assembled inside a benchtop cabinet with either an ultraviolet lamp (UVP, 8 W, UVLMS-38) operating at 365 nm or visible lamp operating at 550 nm.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.