Downscaling of defect-passivated Gd2O3 thin films on p-Si(0 0 1) wafers grown by H2O-assisted atomic layer deposition

Semiconductor Science and Technology

Volumn 25, Issue 10, 2010, Pages

  Ranjith, R ^a   Laha, A ^a   Bugiel, E ^a   Osten, H J ^a   Xu, K ^b   Milanov, A P ^b   Devi, A ^b  

^a LEIBNIZ UNIVERSITY HANNOVER   (Germany)

^b RUHR UNIVERSITY BOCHUM   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AS-GROWN FILMS; CAPACITANCE-EQUIVALENT THICKNESS; COLUMNAR GROWTH; CRYSTALLINE THIN FILMS; DOWN-SCALING; ELECTRICAL CHARACTERISTIC; FLAT-BAND VOLTAGE; GUANIDINATES; HOMOLEPTIC; METAL OXIDE SEMICONDUCTOR; PASSIVATION TREATMENT; PHYSICAL THICKNESS; POLYCRYSTALLINE; POST-DEPOSITION; SI(0 0 1); SI(1 0 0);

ATOMIC LAYER DEPOSITION; DEFECTS; GADOLINIUM; METALLIC COMPOUNDS; MOS DEVICES; OXIDE FILMS; PASSIVATION; SEMICONDUCTOR GROWTH; SILICON WAFERS; THIN FILMS; VAPOR DEPOSITION;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 78649949965     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/25/10/105001     Document Type: Article

References (20)

1. International Technology Roadmap for Semiconductors 2009 (http://www.itrs.net/)
2. Wilk G D, Wallace R M and Anthony J M 2001 J. Appl. Phys. 89 5243
3. Guha S and Narayanan V 2009 Annu. Rev. Mater. Res. 39 181
4. Wong H and Iwai H 2006 Microelectron. Eng. 83 1867
5. Lemme M C, Gottlob H D B, Echtermeyer T J, Kurz H, Endres R, Schwalke U, Czernohorsky M and Osten H J 2009 J. Vac. Sci. Technol. B 27 258
6. Badylevich M, Shamuilia S, Afanas'ev V V, Stesmans A, Laha A, Osten H J and Fissel A 2007 Appl. Phys. Lett. 90 252101
7. Osten H J, Laha A, Czernohorsky M, Bugiel E, Dargis R and Fissel A 2008 Phys. Status Solidi a 205 695
8. Laha A, Osten H J and Fissel A 2006 Appl. Phys. Lett. 89 143514
9. Knez M, Nielsch K and Niinistö L 2007 Adv. Mater. 19 3425
10. George S M 2010 Chem. Rev. 110 111-31
11. Milanov A P, Xu K, Laha A, Bugiel E, Ranjith R, Schwendt D, Osten H J, Parala H, Fischer R A and Devi A 2010 J. Am. Chem. Soc. 132 36 and references therein
12. Jones A C, Aspinall H C, Chalker P R, Potter R J, Kukli K, Rahtu A, Ritala M and Leskelä M 2005 Mater. Sci. Eng. B 118 97
13. Niinistö J, Petrova N, Putkonen M, Niinistö L, Arstila K and Sajavaara T 2005 J. Cryst. Growth 285 191
14. Kukli K, Hatanpää T, Ritala M and Leskelä M 2007 Chem. Vapor Depos. 13 546
15. Milanov A P, Fischer R A and Devi A 2008 Inorg. Chem. 47 11405
16. Kim H, McIntyre P C and Saraswat K C 2003 Appl. Phys. Lett. 82 106
17. Ribes G, Mitard J, Denais M, Bruyere S, Monsieur F, Parthasarathy C, Vincent E and Ghibaudo G 2005 IEEE Trans. Device Mater. Reliab. 5 5
18. Degraeve R, Groeseneken G, Bellens R, Ogier J L, Depas M, Roussel P J and Maes H E 1998 IEEE Trans. Electron Devices 45 904
19. Sun Q Q, Laha A, Ding S J, Zhang D W, Osten H J and Fissel A 2008 Appl. Phys. Lett. 92 152908
20. Schroder D K 1990 Semiconductor Material and Device Characterization (New York: Wiley)