Improvement of amorphous silicon n-i-p solar cells by incorporating double-layer hydrogenated nanocrystalline silicon structure

Journal of Non-Crystalline Solids

Volumn 357, Issue 1, 2011, Pages 121-125

  Liu, Shiyong ^a   Zeng, Xiangbo ^a   Peng, Wenbo ^a   Xiao, Haibo ^a   Yao, Wenjie ^a   Xie, Xiaobing ^a   Wang, Chao ^a   Wang, Zhanguo ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

Buffer layer; Hydrogenated nanocrystalline silicon; I p interface; Solar cells

Indexed keywords

DENSITY OF DEFECTS; DOUBLE LAYERS; ELECTRICAL , OPTICAL AND STRUCTURAL PROPERTIES; GRAIN SIZE; HIGH CONDUCTIVITY; HYDROGEN DILUTION RATIO; HYDROGENATED AMORPHOUS SILICON (A-SI:H); HYDROGENATED NANOCRYSTALLINE SILICON; I/P INTERFACE; LOW-ACTIVATION ENERGY; NC-SI:H; P-LAYER; P-TYPE; WIDE BAND GAP;

ACTIVATION ENERGY; AMORPHOUS FILMS; BUFFER LAYERS; DEFECT DENSITY; ELECTRIC PROPERTIES; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; HYDROGEN; HYDROGENATION; NANOCRYSTALLINE SILICON; RAMAN SPECTROSCOPY; SOLAR CELLS; SOLAR POWER GENERATION; THIN FILMS;

AMORPHOUS SILICON;

EID: 78649757638     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jnoncrysol.2010.10.001     Document Type: Article

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