Ultrathin boron-doped microcrystalline silicon as a novel constant band gap buffer inserted at the p-a-SiC:H/i-a-Si:H interface of amorphous silicon solar cells

Journal of Applied Physics

Volumn 87, Issue 12, 2000, Pages 8778-8785

  Lee, Chang Hyun ^a   Jeon, Jin Wan ^a   Lim, Koeng Su ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0012520529     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.373610     Document Type: Article

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