Density of gap states in amorphous hydrogenated silicon carbide determined using high-frequency capacitance-voltage measurement technique

Diamond and Related Materials

Volumn 10, Issue 3-7, 2001, Pages 1273-1277

  Chew, K ^a   Rusli, ^a   Yu, M B ^a   Yoon, S F ^a   Ligatchev, V ^a   Ahn, J ^a  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

Alloys; Amorphous silicon carbon; Band structure; Density of States (DOS); Heterrojunction

Indexed keywords

CAPACITANCE; CHEMICAL VAPOR DEPOSITION; SILICON CARBIDE;

ENERGY BAND DIAGRAM;

THIN FILMS;

SILICON CARBIDE;

EID: 0343773060     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-9635(00)00362-9     Document Type: Article

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