SCOPUS 정보 검색 플랫폼

Volumn 437, Issue 1-2, 2003, Pages 68-73

Effect of hydrogen dilution on the growth of nanocrystalline silicon films at high temperature by using plasma-enhanced chemical vapor deposition

(2) Ali, A M a,c Hasegawa, S b

a NATIONAL TSING HUA UNIVERSITY (Taiwan)

b KANAZAWA UNIVERSITY (Japan)

c Assiut University (Egypt)

Author keywords

High temperature deposition; Luminescence; Nanocrystalline silicon; Plasma enhanced chemical vapor deposition (PECVD)

Indexed keywords

HYDROGEN; NANOSTRUCTURED MATERIALS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICON;

HYDROGEN DILUTION;

THIN FILMS;

EID: 0037696944 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/S0040-6090(03)00688-6 Document Type: Article

Times cited : (30)

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