The open circuit voltage in amorphous silicon p-i-n solar cells and its relationship to material, device and dark diode parameters

Journal of Applied Physics

Volumn 96, Issue 4, 2004, Pages 2261-2271

  Dutta, U ^a   Chatterjee, P ^a  

^a DEPARTMENT OF MATERIALS SCIENCE   (India)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; AMORPHOUS MATERIALS; COMPUTER SIMULATION; CURRENT DENSITY; DIODES; ELECTROOPTICAL EFFECTS; MATHEMATICAL MODELS; OHMIC CONTACTS; POISSON EQUATION; QUANTUM EFFICIENCY; SOLAR CELLS; SUBSTRATES; THICKNESS MEASUREMENT;

BANDGAPS; CONTACT BARRIER HEIGHT; CONTINUITY EQUATIONS; OPEN CIRCUIT VOLTAGE;

SILICON;

EID: 4344628865     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1769092     Document Type: Article

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