Amorphous Si1-xCx:H films prepared by hot-wire CVD using SiH3CH3 and SiH4 mixture gas and its application to window layer for silicon thin film solar cells

Thin Solid Films

Volumn 516, Issue 5, 2008, Pages 758-760

  Ogawa, Shunsuke ^a   Okabe, Masaaki ^a   Itoh, Takashi ^a   Yoshida, Norimitsu ^a,b   Nonomura, Shuichi ^a,b  

^a GIFU UNIVERSITY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

Hot wire CVD; Silicon carbide; Solar cells; Titanium dioxide

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; HYDROGENATION; SILICON CARBIDE; TITANIUM DIOXIDE;

MIXTURE GAS; SILICON THIN FILM SOLAR CELLS;

AMORPHOUS FILMS;

EID: 36749034773     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2007.06.037     Document Type: Article

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