New model proposed for switching mechanism of ReRAM

21st IEEE Non-Volatile Semiconductor Memory Workshop 2006, NVSMW 2006

Volumn 2006, Issue , 2006, Pages 84-85

  Kinoshita, K ^a   Tamura, T ^a   Aso, H ^a   Noshiro, H ^a   Yoshida, C ^a   Aoki, M ^a   Sugiyama, Y ^a   Tanaka, H ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 33751039012     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/.2006.1629505     Document Type: Conference Paper

References (4)

1. W. W. Zhuang et al., Tech. Digest IEDM 2002, p. 193.
2. S. Q. Liu et al., Apply. Phys. Lett. 76, 2749(2000).
3. A. Beck et al., Apply. Phys. Lett. 77, 139(2001).
4. I. G. Baek et al., Tech. Digest IEDM 2004, p. 587.