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Volumn , Issue , 2008, Pages 271-274

Recent progress in resistance change memory

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Indexed keywords


EID: 64849085970     PISSN: 15483770     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/DRC.2008.4800835     Document Type: Conference Paper
Times cited : (22)

References (24)
  • 7
    • 23944447615 scopus 로고    scopus 로고
    • B.J. Choi et al., J. Appl. Phys., vol. 98, p. 033715 (2005)
    • (2005) J. Appl. Phys , vol.98 , pp. 033715
    • Choi, B.J.1
  • 18
  • 19
    • 34548656097 scopus 로고    scopus 로고
    • M. Janousch et al., Adv. Mat. (Weinheim, Ger.), 19, p. 2232 (2007)
    • M. Janousch et al., Adv. Mat. (Weinheim, Ger.), vol. 19, p. 2232 (2007)
  • 23
    • 64849105507 scopus 로고    scopus 로고
    • 2/Pt [9]). However, it is not clear that the physical changes produced by electrical forming have actually been avoided, or simply reduced to voltages/times comparable to those sufficient to switch the device into a low-resistance state.
    • 2/Pt [9]). However, it is not clear that the physical changes produced by electrical forming have actually been avoided, or simply reduced to voltages/times comparable to those sufficient to switch the device into a low-resistance state.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.