Total ionizing dose effects in shallow trench isolation oxides

Microelectronics Reliability

Volumn 48, Issue 7, 2008, Pages 1000-1007

  Faccio, Federico ^a   Barnaby, Hugh J ^c   Chen, Xiao J ^c   Fleetwood, Daniel M ^b   Gonella, Laura ^a   McLain, Michael ^c   Schrimpf, Ronald D ^b  

^a CERN   (Switzerland)

^b VANDERBILT UNIVERSITY   (United States)

^c Arizona State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BIOLOGICAL ORGANS; DEFECT STRUCTURES; IONIZING RADIATION; LEAKAGE CURRENTS; LITHOGRAPHY; MOSFET DEVICES; PHOTOACOUSTIC EFFECT; SEMICONDUCTING SILICON; TRANSISTORS;

(P ,P ,T) MEASUREMENTS; BALANCE (WEIGHTING); BIAS POLARITY; BORDER TRAPS; CIRCUIT RELIABILITY; DEFECT CENTERS; EVOLUTION (CO); FIELD OXIDE (FOX); GATE OXIDES; IN-FIELD; INTERFACE TRAPPING; LOW DOSE RATE (LDR); NEGATIVE CHARGING; POSITIVE CHARGES; RADIATION RESPONSES; SHALLOW TRENCH ISOLATION (STI); SILICON (111) SUBSTRATES; TOTAL IONIZING DOSE (TID); TOTAL IONIZING DOSE (TID) EFFECTS; TRAP CHARGING;

FIELD EFFECT TRANSISTORS;

EID: 48149105988     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2008.04.004     Document Type: Article

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