Electroabsorption characteristics of single-mode 1.3-μm InAs-InGaAs-GaAs ten-layer quantum-dot waveguide

IEEE Photonics Technology Letters

Volumn 22, Issue 23, 2010, Pages 1717-1719

  Ngo, C Y ^a   Yoon, S F ^b   Lee, S Y ^b   Zhao, H X ^b   Wang, R ^b   Lim, D R ^b   Wong, Vincent ^c   Chua, S J ^a  

^a INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

^b NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^c NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

Electroabsorption modulator (EAM); InAs InGaAs GaAs; quantum dot (QD); single mode

Indexed keywords

ELECTRO-ABSORPTION; EXTINCTION RATIOS; GAAS; INAS; MONOLITHIC INTEGRATION; MULTIMODES; QD LASERS; QUANTUM DOTS; RESEARCH EFFORTS; SINGLE MODE;

GALLIUM ALLOYS; GALLIUM ARSENIDE; INDIUM ARSENIDE; LIGHT EXTINCTION; LOCAL AREA NETWORKS; METROPOLITAN AREA NETWORKS; MODULATORS; MONOLITHIC INTEGRATED CIRCUITS; QUANTUM DOT LASERS; SEMICONDUCTING GALLIUM; SEMICONDUCTING INDIUM; SEMICONDUCTOR QUANTUM DOTS; WAVEGUIDES;

ELECTROABSORPTION MODULATORS;

EID: 78649313716     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2010.2083642     Document Type: Article

References (21)

1. H. Y. Liu, D. T. Childs, T. J. Badcock, K. M. Groom, I. R. Sellers, M. Hopkinson, R. A. Hogg, D. J. Robbins, D. J. Mowbray, and M. S. Skolnick, "High-performance three-layer 1.3-μm InAs-GaAs quantum-dot lasers with very low continuous-wave room-temperature threshold currents", IEEEPhoton. Technol. Lett., vol. 17, no. 6, pp. 1139-1141, Jun. 2005.
2. D. W. Xu, S. F. Yoon, C. Z. Tong, L. J. Zhao, Y. Ding, and W. J. Fan, "High-temperature continuous-wave single-mode operation of 1.3-μm p-doped InAs-GaAs quantum-dot VCSELs", IEEE Photon. Technol. Lett., vol. 21, no. 17, pp. 1211-1213, Sep. 1, 2009.
3. H. Su, L. Zhang, R. Wang, T. C. Newell, A. L. Gray, and L. F. Lester, "Linewidth study of InAs-InGaAs quantum dot distributed feedback lasers", IEEE Photon. Technol. Lett., vol. 16, no. 10, pp. 2206-2208, Oct. 2004.
4. H. Fukano, Y. Akage, Y. Kawaguchi, Y. Suzaki, K. Kishi, T. Yamanaka, Y. Kondo, and H. Yasaka, "Low chirp operation of 40 Gb/s electroabsorption modulator integrated DFB laser module with low driving voltage", IEEE J. Sel. Topics Quantum Electron., vol. 13, no. 5, pp. 1129-1134, Sep. 2007.
5. R. Sahara, M. Matsuda, H. Shoji, K. Morito, and H. Soda, "Proposal for quantum-dot electroabsorption modulator", IEEE Photon. Technol. Lett., vol. 8, no. 11, pp. 1477-1479, Nov. 1996.
6. A. Ramdane, F. Devaux, N. Souli, D. Delprat, and A. Ougazzaden, "Monolithic integration of multiple-quantum-well lasers and modulators for high-speed transmission", IEEE J. Sel. Topics Quantum Electron., vol. 2, no. 2, pp. 326-335, Jun. 1996.
7. M. Chacinski, U. Westergren, B. Stoltz, and L. Thylen, "Monolithically integrated DFB-EA for 100 Gb/s ethernet", IEEE Electron Device Lett., vol. 29, no. 12, pp. 1312-1314, Dec. 2008.
8. V. A. Shchukin, N. N. Ledenstov, and D. Bimberg, Epitaxy of Nanostructures. Berlin: Springer, 2003, ch. 4.
9. 0.8 As grown on GaAs substrates", Appl. Phys. Lett., vol. 74, no. 8, pp. 1111-1113, Feb. 1999.
10. C. Y. Ngo, S. F. Yoon, D. R. Lim, V. Wong, and S. J. Chua, "Temperature-dependent photoluminescence study of 1.3 μm undoped InAs/In-GaAs/GaAs quantum dots", Appl. Phys. Lett., vol. 93, no. 4, p. 041912, Jul. 2008.
11. D. B. Malins, A. Gomez-Iglesias, E. U. Rafailov, W. Sibbett, and A. Miller, "Electroabsorption and electrorefraction in an InAs quantum-dot waveguide modulator", IEEE Photon. Technol. Lett., vol. 19, no. 15, pp. 1118-1120, Aug. 1, 2007.
12. I. B. Akca, A. Dana, A. Aydinli, M. Rossetti, L. Li, A. Fiore, and N. Dagli, "Electro-optic and electro-absorption characterization of InAs quantum dot waveguides", Opt. Express, vol. 16, no. 5, pp. 3439-3444, Mar. 2008.
13. C. Y. Ngo, S. F. Yoon, W. K. Loke, Q. Cao, D. R. Lim, V. Wong, Y. K. Sim, and S. J. Chua, "Investigation of semiconductor quantum dots for waveguide electroabsorption modulator", Nanoscale Res. Lett., vol. 3, no. 12, pp. 486-490, Dec. 2008.
14. C. Y. Ngo, S. F. Yoon, W. K. Loke, Q. Cao, D. R. Lim, V. Wong, Y. K. Sim, and S. J. Chua, "Characteristics of 1.3 μm InAs/InGaAs/GaAs quantum dot electroabsorption modulator", Appl. Phys. Lett., vol. 94, no. 14, p. 143108, Apr. 2009.
15. Q. Cao, S. F. Yoon, C. Y. Liu, and C. Y. Ngo, "Narrow ridge waveguide high power single mode 1.3-μm InAs/InGaAs ten-layer quantum dot lasers", Nanoscale Res. Lett., vol. 2, no. 6, pp. 303-307, Jun. 2007.
16. D. A. B. Miller, D. S. Chemla, T. C. Damen, A. C. Gossard, W. Wiegmann, T. H. Wood, and C. A. Burrus, "Band-edge electroabsorption in quantum well structures: The quantum-confined Stark effect", Phys. Rev. Lett., vol. 53, no. 22, pp. 2173-2176, Nov. 1984.
17. C. Y. Ngo, S. F. Yoon, C. Z. Tong, W. K. Loke, and S. J. Chua, "An investigation of growth temperature on the surface morphology and optical properties of 1.3 μm InAs/InGaAs/GaAs quantum dot structures", Nanotechnology, vol. 18, no. 36, p. 365708, Sep. 2007.
18. K. K. Loi, L. Shen, H. H. Wieder, and W. S. C. Chang, "Electroabsorption waveguide modulators at 1.3 μm fabricated on GaAs substrates", IEEE Photon. Technol. Lett., vol. 9, no. 9, pp. 1229-1231, Sep. 1997. (Pubitemid 127563998)
19. T. H. Wood, J. Z. Pastalan, C. A. Burrus, B. C. Johnson Jr., B. I. Miller, J. L. deMiguel, U. Koren, and M. G. Young, "Electric field screening by photogenerated holes in multiple quantum wells: A new mechanism for absorption saturation", Appl. Phys. Lett., vol. 57, no. 11, pp. 1081-1083, Sep. 1990.
20. D. S. Shin, W. X. Chen, Y. Zhuang, Y. Wu, S. A. Pappert, D. Chow, D. Yap, P. Deelman, and P. K. L. Yu, "Suppressing electroabsorption with intra-step-barrier quantum wells for high-power electroabsorption modulators", Electron. Lett., vol. 38, no. 19, pp. 1140-1142, Sep. 2002.
21. S. M. Hubbard, C. D. Cress, C. G. Bailey, R. P. Raffaelle, S. G. Bailey, and D. M. Wilt, "Effect of strain compensation on quantum dot enhanced GaAs solar cells", Appl. Phys. Lett., vol. 92, no. 12, p. 123512, Mar. 2008.