Electroabsorption waveguide modulators at 1.3 μm fabricated on GaAs substrates

IEEE Photonics Technology Letters

Volumn 9, Issue 9, 1997, Pages 1229-1231

  Loi, K K ^a,b   Shen, L ^b   Wieder, H H ^a,b   Chang, W S C ^a,b  

^a IEEE   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

Electrooptic modulation; Optoelectronic devices; p i n diodes; Quantum confined Stark effect; Quantum well devices

Indexed keywords

ELECTROOPTICAL EFFECTS; LATTICE CONSTANTS; LIGHT MODULATION; OPTICAL LINKS; OPTICAL WAVEGUIDES; OPTOELECTRONIC DEVICES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS; SUBSTRATES;

ELECTROABSORPTION WAVEGUIDE MODULATORS; QUANTUM CONFINED STARK EFFECTS;

LIGHT MODULATORS;

EID: 0031234120     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.618487     Document Type: Article

References (8)

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