Characteristics of 1.3 μm InAs/InGaAs/GaAs quantum dot electroabsorption modulator

Applied Physics Letters

Volumn 94, Issue 14, 2009, Pages

  Ngo, C Y ^a   Yoon, S F ^a   Loke, W K ^a   Cao, Q ^a   Lim, D R ^a   Wong, Vincent ^a   Sim, Y K ^a   Chua, S J ^b  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ANALOG FIBER LINKS; EXTINCTION RATIOS; HEAVY HOLES; OPTICAL POWER HANDLINGS; POTENTIAL BARRIERS; QUANTUM DOTS; REVERSE BIAS; THREE-DIMENSIONAL MODELS;

ELECTRIC NETWORK ANALYSIS; LIGHT ABSORPTION; MODULATORS; SEMICONDUCTOR QUANTUM DOTS; THREE DIMENSIONAL;

ELECTROABSORPTION MODULATORS;

EID: 64349084481     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3119186     Document Type: Article

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