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Nanoscale Research Letters

Volumn 3, Issue 12, 2008, Pages 486-490

Investigation of semiconductor quantum dots for waveguide electroabsorption modulator

(8) Ngo, C Y a Yoon, S F a Loke, W K a Cao, Q a Lim, D R a Wong, Vincent b Sim, Y K b Chua, S J c

a NANYANG TECHNOLOGICAL UNIVERSITY (Singapore)

b NANYANG TECHNOLOGICAL UNIVERSITY (Singapore)

c INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING (Singapore)

Author keywords

Electroabsorption modulator; InAs quantum dots; Optical transmission; Photocurrent; Ridge waveguide structure

Indexed keywords

ABSORPTION CHANGES; ACTIVE REGIONS; AT WAVELENGTHS; EXTINCTION RATIOS; FIELD IONIZATIONS; INAS QUANTUM DOTS; INTRINSIC LAYER THICKNESSES; OPTICAL TRANSMISSION; OPTICAL TRANSMISSION MEASUREMENTS; PHOTOCURRENT MEASUREMENTS; RESEARCH EFFORTS; RESONANCE PEAKS; REVERSE BIASES; RIDGE WAVEGUIDE STRUCTURE; RIDGE WAVEGUIDE STRUCTURES; STARK SHIFTS;

ELECTROABSORPTION MODULATORS; INDIUM ARSENIDE; LIGHT ABSORPTION; LIGHT MODULATORS; LIGHT TRANSMISSION; MODULATION; OPTICAL WAVEGUIDES; PHOTOCURRENTS; QUANTUM ELECTRONICS; SEMICONDUCTING INDIUM; WAVEGUIDE COMPONENTS; WAVEGUIDES;

SEMICONDUCTOR QUANTUM DOTS;

EID: 55849151686 PISSN: 19317573 EISSN: 1556276X Source Type: Journal
DOI: 10.1007/s11671-008-9184-7 Document Type: Article

Times cited : (20)

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