High-temperature continuous-wave single-mode operation of 1.3-μm p-doped InAs-GaAs quantum-Dot VCSELs

IEEE Photonics Technology Letters

Volumn 21, Issue 17, 2009, Pages 1211-1213

  Xu, D W ^a   Yoon, S F ^a   Tong, C Z ^a   Zhao, L J ^b   Ding, Y ^a   Fan, W J ^a  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

Quantum dot (QD); Single mode; Thermal stability; Threshold current; Vertical cavity surface emitting lasers (VCSELs)

Indexed keywords

QUANTUM DOT (QD); SINGLE-MODE; THERMAL STABILITY; THRESHOLD CURRENT; VERTICAL-CAVITY SURFACE-EMITTING LASERS (VCSELS);

CONTINUOUS WAVE LASERS; GALLIUM ALLOYS; INDIUM ARSENIDE; LASERS; OPTICAL WAVEGUIDES; PHOSPHORUS; SEMICONDUCTING GALLIUM; SEMICONDUCTING INDIUM; SURFACE EMITTING LASERS; THERMODYNAMIC STABILITY;

SEMICONDUCTOR QUANTUM DOTS;

EID: 69649090157     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2009.2024220     Document Type: Article

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