Study on the electron overflow in 264 nm alGaN light-emitting diodes

IEEE Journal of Quantum Electronics

Volumn 46, Issue 12, 2010, Pages 1854-1859

  Zhang, Jicai ^a,b   Sakai, Yusuke ^a   Egawa, Takashi ^a  

^a NAGOYA INSTITUTE OF TECHNOLOGY   (Japan)

^b SUZHOU INSTITUTE OF NANO TECH AND NANO BIONICS   (China)

Author keywords

AlGaN deep ultraviolet light emitting diodes; band diagram; electroluminescence; electron overflow; semiconductor diodes

Indexed keywords

ACTIVE REGIONS; ALGAN; ALN; BAND DIAGRAMS; BARRIER HEIGHTS; DEEP-ULTRAVIOLET LIGHT-EMITTING DIODES; ELECTRICAL FIELD; ELECTRON OVERFLOW; HETEROSTRUCTURES; HOLE INJECTION; INJECTION CURRENTS; MAXIMUM OUTPUT POWER; OPERATING TEMPERATURE; ORDERS OF MAGNITUDE; P-TYPE; POLARIZATION FIELD; SINGLE LAYER;

DIODES; ELECTROLUMINESCENCE; ELECTRONS; LIGHT EMISSION; LIGHT EMITTING DIODES; OPTICAL PROPERTIES; SEMICONDUCTOR JUNCTIONS; ULTRAVIOLET RADIATION;

SEMICONDUCTOR DIODES;

EID: 78649256782     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/JQE.2010.2052094     Document Type: Article

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