SCOPUS 정보 검색 플랫폼

Applied Physics Letters

Volumn 97, Issue 20, 2010, Pages

Evaluation of long carrier lifetimes in thick 4H silicon carbide epitaxial layers

(3) Miyazawa, Tetsuya a Ito, Masahiko a Tsuchida, Hidekazu a

a CENTRAL RESEARCH INSTITUTE OF ELECTRIC POWER INDUSTRY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

4H SILICON CARBIDE; BULK LIFETIME; EPILAYER THICKNESS; HIGH INJECTION; HOLE DIFFUSION; MICROWAVE PHOTOCONDUCTIVITY; MINORITY CARRIER LIFETIMES; SURFACE RECOMBINATIONS; TIME-RESOLVED PHOTOLUMINESCENCE;

EPILAYERS; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE;

CARRIER LIFETIME;

EID: 78649240946 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3517487 Document Type: Article

Times cited : (74)

References (14)

1
- 0038302824
- 0021-8979,. 10.1063/1.1543240
- J. Zhang, L. Storasta, J. P. Bergman, N. T. Son, and E. Janźn, J. Appl. Phys. 0021-8979 93, 4708 (2003). 10.1063/1.1543240
- (2003) J. Appl. Phys. , vol.93 , pp. 4708
- Zhang, J.¹ Storasta, L.² Bergman, J.P.³ Son, N.T.⁴ Janźn, E.⁵

2
- 4644282156
- 0255-5476,. 10.4028/www.scientific.net/MSF.457-460.565
- T. Tawara, H. Tsuchida, S. Izumi, I. Kamata, and K. Izumi, Mater. Sci. Forum 0255-5476 457-460, 565 (2004). 10.4028/www.scientific.net/MSF.457-460.565
- (2004) Mater. Sci. Forum , vol.457-460 , pp. 565
- Tawara, T.¹ Tsuchida, H.² Izumi, S.³ Kamata, I.⁴ Izumi, K.⁵

3
- 34249069562
- Investigation of carrier lifetime in 4H-SiC epilayers and lifetime control by electron irradiation
- DOI 10.1063/1.2740580
- K. Danno, D. Nakamura, and T. Kimoto, Appl. Phys. Lett. 0003-6951 90, 202109 (2007). 10.1063/1.2740580 (Pubitemid 46794002)
- (2007) Applied Physics Letters , vol.90 , Issue.20 , pp. 202109
- Danno, K.¹ Nakamura, D.² Kimoto, T.³

4
- 32044474656
- - 4H-SiC epilayers
- DOI 10.1063/1.2170144, 052110
- P. B. Klein, B. V. Shanabrook, S. W. Huh, A. Y. Polyakov, M. Skowronski, J. J. Sumakeris, and M. J. O'Loughlin, Appl. Phys. Lett. 0003-6951 88, 052110 (2006). 10.1063/1.2170144 (Pubitemid 43192073)
- (2006) Applied Physics Letters , vol.88 , Issue.5 , pp. 1-3
- Klein, P.B.¹ Shanabrook, B.V.² Huh, S.W.³ Polyakov, A.Y.⁴ Skowronski, M.⁵ Sumakeris, J.J.⁶ O'Loughlin, M.J.⁷

5
- 33846987871
- 0003-6951,. 10.1063/1.2472530
- L. Storasta and H. Tsuchida, Appl. Phys. Lett. 0003-6951 90, 062116 (2007). 10.1063/1.2472530
- (2007) Appl. Phys. Lett. , vol.90 , pp. 062116
- Storasta, L.¹ Tsuchida, H.²

6
- 38149122292
- 0021-8979,. 10.1063/1.2829776
- L. Storasta, H. Tsuchida, T. Miyazawa, and T. Ohshima, J. Appl. Phys. 0021-8979 103, 013705 (2008). 10.1063/1.2829776
- (2008) J. Appl. Phys. , vol.103 , pp. 013705
- Storasta, L.¹ Tsuchida, H.² Miyazawa, T.³ Ohshima, T.⁴

7
- 70349099954
- 1882-0778,. 10.1143/APEX.2.091101
- T. Hiyoshi and T. Kimoto, Appl. Phys. Express 1882-0778 2, 091101 (2009). 10.1143/APEX.2.091101
- (2009) Appl. Phys. Express , vol.2 , pp. 091101
- Hiyoshi, T.¹ Kimoto, T.²

8
- 57049170882
- 1882-0778,. 10.1143/APEX.1.015001
- M. Ito, L. Storasta, and H. Tsuchida, Appl. Phys. Express 1882-0778 1, 015001 (2008). 10.1143/APEX.1.015001
- (2008) Appl. Phys. Express , vol.1 , pp. 015001
- Ito, M.¹ Storasta, L.² Tsuchida, H.³

9
- 0000460655
- 0021-8979,. 10.1063/1.368403
- S. G. Sridhara, R. P. Devaty, and W. J. Choyke, J. Appl. Phys. 0021-8979 84, 2963 (1998). 10.1063/1.368403
- (1998) J. Appl. Phys. , vol.84 , pp. 2963
- Sridhara, S.G.¹ Devaty, R.P.² Choyke, W.J.³

10
- 36248996256
- 0255-5476,. 10.4028/www.scientific.net/MSF.527-529.31
- J. R. Jenny, D. P. Malta, V. T. Tsvetkov, M. K. Das, H. McD. Hobgood, and C. H. Carter, Jr., Mater. Sci. Forum 0255-5476 527-529, 31 (2006). 10.4028/www.scientific.net/MSF.527-529.31
- (2006) Mater. Sci. Forum , vol.527-529 , pp. 31
- Jenny, J.R.¹ Malta, D.P.² Tsvetkov, V.T.³ Das, M.K.⁴ Hobgood, H.McD.⁵ Carter Jr., C.H.⁶

11
- 55449084247
- 0370-1972,. 10.1002/pssb.200844076
- T. Kimoto, K. Danno, and J. Suda, Phys. Status Solidi B 0370-1972 245, 1327 (2008). 10.1002/pssb.200844076
- (2008) Phys. Status Solidi B , vol.245 , pp. 1327
- Kimoto, T.¹ Danno, K.² Suda, J.³

12
- 0035898459
- Optical characterization of excess carrier lifetime and surface recombination in 4H/6H-SiC
- DOI 10.1063/1.1385588
- A. Galeckas, J. Linnros, M. Frischholz, and V. Grivickas, Appl. Phys. Lett. 0003-6951 79, 365 (2001). 10.1063/1.1385588 (Pubitemid 32690380)
- (2001) Applied Physics Letters , vol.79 , Issue.3 , pp. 365-367
- Galeckas, A.¹ Linnros, J.² Frischholz, M.³ Grivickas, V.⁴

13
- 0001139879
- 0003-6951,. 10.1063/1.120309
- A. Galeckas, J. Linnros, V. Grivickas, U. Lindefelt, and C. Hallin, Appl. Phys. Lett. 0003-6951 71, 3269 (1997). 10.1063/1.120309
- (1997) Appl. Phys. Lett. , vol.71 , pp. 3269
- Galeckas, A.¹ Linnros, J.² Grivickas, V.³ Lindefelt, U.⁴ Hallin, C.⁵

14
- 0004071496
- 3rd ed. (Wiley, New Jersey),.
- D. K. Schroder, Semiconductor Material and Device Characterization, 3rd ed. (Wiley, New Jersey, 2006), p. 389.
- (2006) Semiconductor Material and Device Characterization , pp. 389
- Schroder, D.K.¹

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.