High-current back-illuminated partially depleted-absorber p-i-n photodiode with depleted nonabsorbing region

IEEE Transactions on Microwave Theory and Techniques

Volumn 58, Issue 11 PART 2, 2010, Pages 3154-3160

  Sakai, Kiyohide ^a   Ishimura, Eitaro ^a   Nakaji, Masaharu ^a   Itakura, Shigetaka ^a   Hirano, Yoshihito ^a   Aoyagi, Toshitaka ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

Frequency response; p i n photodiodes (PDs); photodiodes (PDs); space charge

Indexed keywords

BACK-ILLUMINATED; HIGH-CURRENT; INGAAS/INP; PARTIALLY DEPLETED; PHOTOGENERATED ELECTRONS; PIN PHOTODIODE; RF-POWER; SPACE CHARGES; THERMAL FAILURE; THERMAL RESISTANCE;

CAPACITANCE; HEAT RESISTANCE; PHOTODIODES;

FREQUENCY RESPONSE;

EID: 78449307155     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMTT.2010.2075470     Document Type: Article

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