Thermal analysis of high-power InGaAs-InP photodiodes

IEEE Journal of Quantum Electronics

Volumn 42, Issue 12, 2006, Pages 1255-1258

  Duan, Ning ^a   Wang, Xin ^a   Li, Ning ^b   Liu, Han Din ^a   Campbell, Joe C ^a  

^a University of Virginia   (United States)

^b YALE UNIVERSITY   (United States)

Author keywords

Frequency response; Heating, high power photodetectors; Photocurrent; Photodetectors; Photodiodes; Saturation current; Space charge effect; Thermal factors

Indexed keywords

DEPLETION REGIONS; HIGH-POWER; INP; OUTPUT POWER; SATURATION CURRENT; SPACE-CHARGE EFFECT; THERMAL ANALYSIS; THERMAL FACTORS; UNI-TRAVELING-CARRIER PHOTODIODES;

BANDWIDTH; CHARGE CARRIERS; DC GENERATORS; HEATING; HETEROJUNCTION BIPOLAR TRANSISTORS; OPTOELECTRONIC DEVICES; PHOTOCURRENTS; PHOTODETECTORS; PHOTODIODES; SEMICONDUCTING INDIUM; THERMOANALYSIS;

FREQUENCY RESPONSE;

EID: 46849122584     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/JQE.2006.883498     Document Type: Article

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