A comparison of front- and backside-illuminated high-saturation power partially depleted absorber photodetecters

IEEE Journal of Quantum Electronics

Volumn 40, Issue 9, 2004, Pages 1321-1325

  Li, Xiaowei ^a   Li, Ning ^a   Demiguel, Stéphane ^a   Campbell, Joe C ^a   Tulchinsky, David ^b   Williams, Keith J ^b  

^a The University of Texas at Austin   (United States)

^b NAVAL RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; ELECTRIC RESISTANCE; ELECTRIC SPACE CHARGE; LIGHT ABSORPTION; PHOTODIODES; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES;

ABSORBER PHOTODETECTER; BACKSIDE ILLUMINATION; HIGH POWER PHOTODETECTERS; PARTIALLY DEPLETED ABSORBER; PHOTODIDOE STRUCTURE; SATURATION CURRENTS; SHEET RESISTANCE; SPACE CHARGE EFFECT;

PHOTODETECTORS;

EID: 4544370765     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/JQE.2004.833206     Document Type: Article

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