Rad-hard, ultra-fast, InGaAs photodiodes for space applications

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6220, Issue , 2006, Pages

  Joshi, Abhay M ^a   Heine, Frank ^b   Feifel, Thomas ^b  

^a DISCOVERY SEMICONDUCTORS INC   (United States)

^b Tesat Spacecom GmbH and Co KG   (Germany)

Author keywords

And dark current; Gamma radiation; InGaAs photodiodes; Proton radiation; Rad hard; Responsivity; Ultra fast; Vibration

Indexed keywords

BANDWIDTH; GAMMA RAYS; OPTICAL RADAR; POLARIZATION; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SPACE APPLICATIONS; TELECOMMUNICATION LINKS; ULTRAFAST PHENOMENA; VIBRATION MEASUREMENT;

DARK CURRENTS; INGAAS PHOTODIODES; PROTON RADIATION; RAD-HARD PHOTODIODES; RESPONSIVITY;

PHOTODIODES;

EID: 33747344417     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.666055     Document Type: Conference Paper

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