A method to estimate the junction temperature of photodetectors operating at high photocurrent

IEEE Journal of Quantum Electronics

Volumn 45, Issue 12, 2009, Pages 1537-1541

  Chen, Hao ^a   Beling, Andreas ^a   Pan, Huapu ^a   Campbell, Joe C ^a  

^a University of Virginia   (United States)

Author keywords

InGaAs; Photodetector; Photodiode (PD)

Indexed keywords

BAND GAPS; EXPERIMENTAL DATA; INGAAS; INGAAS PHOTODETECTORS; JUNCTION TEMPERATURES; OPERATING CURRENTS; OUTPUT POWER; RESPONSIVITY; TEMPERATURE DEPENDENCE;

PHOTOCURRENTS; PHOTODETECTORS; PHOTODIODES; SEMICONDUCTING INDIUM; SIMULATORS;

OPTOELECTRONIC DEVICES;

EID: 72949083751     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/JQE.2009.2023609     Document Type: Article

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