Comparison of Power Dissipation Tolerance of InP/InGaAs UTC-PDs and Pin-PDs

IEICE Transactions on Electronics

Volumn E86-C, Issue 5, 2003, Pages 864-866

  Yasui, Takako ^a   Furuta, Tomofumi ^a   Ishibashi, Tadao ^a   Ito, Hiroshi ^a  

^a NTT CORPORATION   (Japan)

Author keywords

Failure; High power optical input; Photodiode; Uni travelling carrier photodiode

Indexed keywords

ELECTRIC FIELDS; ENERGY DISSIPATION; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE;

POWER DISSIPATION;

PHOTODIODES;

EID: 0141903231     PISSN: 09168524     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Conference Paper

References (6)

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