A 920-1650-nm high-current photodetector

IEEE Photonics Technology Letters

Volumn 8, Issue 10, 1996, Pages 1373-1375

  Davis, G A ^a,c   Weiss, R E ^a   LaRue, R A ^a   Williams, K J ^b   Esman, R D ^b,c  

^a Intevac Inc   (United States)

^b NAVAL RESEARCH LABORATORY   (United States)

^c IEEE

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; BANDWIDTH; ELECTRIC CURRENT MEASUREMENT; LIGHT ABSORPTION; QUANTUM EFFICIENCY; SEMICONDUCTING GALLIUM ARSENIDE;

DARK CURRENT DEVICES; POWER DISSIPATION;

PHOTODETECTORS;

EID: 0030269654     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.536659     Document Type: Article

References (7)

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2. 0.48As heterojunction band offsets by X-ray photoemission spectroscopy, "J. Vac. Sci. Technol. B, vol. 8, pp. 768-772, 1990.
3. 0.47As, N-n Heterojunction by C-V Profiling," Appl. Phys. Lett., vol. 43, pp. 118-120, 1983.
4. J. I. Davies, A. C. Marshall, M. D. Scott, and R. J. M. Griffiths, "Structural and optical properties of GaAlInAs lattice matched to InP grown by low-pressure metalorganic vapor phase epitaxy," Appl. Phys. Lett., vol. 53, pp. 276-278, 1988.
5. R. D. Esman and K. J. Williams, "Measurement of harmonic distortion in microwave photodetectors," IEEE Photon. Technol. Lett., vol. 2, pp. 502-504, 1990.
6. K. J. Williams, R. D. Esman, and M. Dagenais, "Effects of high space-charge fields on the response of microwave photodetectors," IEEE Photon. Technol. Lett., vol. 6, pp. 639-641, 1994.
7. _, "Nonlinearities in p-i-n microwave photodetectors," J. Lightwave Technol., vol. 14, pp. 84-96, 1996.