Differences in p-side and n-side illuminated p-i-n photodiode nonlinearities

IEEE Photonics Technology Letters

Volumn 10, Issue 1, 1998, Pages 132-134

  Williams, Keith J ^a,b   Esman, Ronald D ^a,b   Wilson, Randall B ^a,c   Kulick, John D ^a,c  

^a IEEE   (United States)

^b NAVAL RESEARCH LABORATORY   (United States)

^c AMP Incorporated   (United States)

Author keywords

Nonlinear Distortions; Nonlinearities; p i n photodiodes; Photodetectors; Photodiodes; Semiconductor device modeling; Simulation

Indexed keywords

CARRIER CONCENTRATION; COMPUTER SIMULATION; ELECTRIC CURRENT MEASUREMENT; ELECTRIC DISTORTION; ELECTRIC FIELD EFFECTS; NONLINEAR OPTICS; PHOTODIODES; SEMICONDUCTOR DEVICE MODELS;

SIGNAL COMPRESSION;

PHOTODETECTORS;

EID: 0031694379     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.651136     Document Type: Article

References (8)

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