Epitaxial lateral overgrowth of GaN on sapphire substrate using high-dose N+ -ion-implantation

Journal of the Electrochemical Society

Volumn 157, Issue 12, 2010, Pages

  Kim, Bumjoon ^a   Jang, Samseok ^a   Kim, Sangil ^a   Kim, Youngseok ^a   Lee, Jaesang ^b   Byun, Dongjin ^a  

^a Korea University   (South Korea)

^b Korea Atomic Energy Research Institute   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

DISLOCATION DENSITIES; EPITAXIAL LATERAL OVERGROWTH; GAN LAYERS; HIGH DOSE; ION IMPLANTED; MASK LESS; PHOTOLUMINESCENCE ANALYSIS; SAPPHIRE SUBSTRATES; SINGLE-STEP; STRIPE PATTERN;

COALESCENCE; DIELECTRIC MATERIALS; EPITAXIAL GROWTH; GALLIUM NITRIDE; IONS; SAPPHIRE; SILICON COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY;

GALLIUM ALLOYS;

EID: 78449304398     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3503539     Document Type: Article

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