Selective-area and lateral epitaxial overgrowth of III-N materials by metalorganic chemical vapor deposition

Journal of Crystal Growth

Volumn 195, Issue 1-4, 1998, Pages 340-345

  Dupuis, R D ^a   Park, J ^a   Grudowski, P A ^a   Eiting, C J ^a,c   Liliental Weber, Z ^b  

^a The University of Texas at Austin   (United States)

^b LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^c AIR FORCE RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CATHODOLUMINESCENCE; CRYSTAL ORIENTATION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTOR GROWTH; SILICA; SINGLE CRYSTALS; TRANSMISSION ELECTRON MICROSCOPY;

LATERAL EPITAXIAL OVERGROWTH;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0032477233     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00674-5     Document Type: Article

References (13)

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