Effects of N+-implanted sapphire (0 0 0 1) substrate on GaN epilayer

Journal of Crystal Growth

Volumn 236, Issue 4, 2002, Pages 538-544

  Cho, Yong Suk ^a,b   Koh, Eui Kwan ^c   Park, Young Ju ^a   Koh, Dongwan ^a   Kim, Eun Kyu ^a   Moon, Youngboo ^d   Leem, Shi Jong ^d   Kim, Gyeungho ^a   Byun, Dongjin ^b  

^a Korea Institute of Science and Technology   (South Korea)

^b Korea University   (South Korea)

^c Korea Basic Science Institute (KBSI)   (South Korea)

^d LG Electronics Inc   (South Korea)

Author keywords

A1. Characterization; A3. Metal organic chemical vapor deposition; B1. Nitrides

Indexed keywords

CRYSTALLOGRAPHY; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NITROGEN; SAPPHIRE; SEMICONDUCTING GALLIUM COMPOUNDS; SUBSTRATES;

EPILAYERS;

ION IMPLANTATION;

EID: 0036494438     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)00840-0     Document Type: Article

References (14)