Influence of the barrier composition on the light output of InGaN multiple-quantum-well ultraviolet light emitting diodes

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6797, Issue , 2007, Pages

  Knauer, A ^a   Kueller, V ^a   Einfeldt, S ^a   Hoffmann, V ^a   Kolbe, T ^b   Van Look, J R ^b   Piprek, J ^c   Weyers, M ^a   Kneissl, M ^a,b  

^a LEIBNIZ INSTITUT FÜR HÖCHSTFREQUENZTECHNIK   (Germany)

^b TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

^c NUSOD Institute LLC   (United States)

Author keywords

InAlGaN; InGaN MQW; Light output; MOVPE; Strain compensation; UV LED

Indexed keywords

LEAKAGE CURRENTS; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; STRAIN MEASUREMENT; ULTRAVIOLET DEVICES;

BARRIER COMPOSITION; BARRIER LAYERS; STRAIN COMPENSATION;

LIGHT EMITTING DIODES;

EID: 42949112607     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.774648     Document Type: Conference Paper

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