MOVPE growth for UV-LEDs

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7231, Issue , 2009, Pages

  Knauer, Arne ^a   Brunner, Frank ^a   Kolbe, Tim ^b   Küller, Viola ^a   Rodriguez, Hernan ^a   Einfeldt, Sven ^a   Weyers, Markus ^a   Kneissl, Michael ^a,b  

^a LEIBNIZ INSTITUT FÜR HÖCHSTFREQUENZTECHNIK   (Germany)

^b TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

Author keywords

AIN; AlGaInN; AlGaN; Epitaxy; LEDs; Light emitting diodes; MOVPE; Ultraviolet; UV

Indexed keywords

AIN; ALGAINN; ALGAN; EPITAXY; LEDS; MOVPE; ULTRAVIOLET; UV;

ALUMINA; ALUMINUM; CRYSTAL GROWTH; CURRENT DENSITY; DIODES; GALLIUM NITRIDE; LIGHT EMISSION; LIGHTING; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTING GALLIUM; SOLID STATE DEVICES; SPECIAL EFFECTS;

LIGHT EMITTING DIODES;

EID: 63449085542     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.816927     Document Type: Conference Paper

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