Effects of GaN substrates on InAlGaN quaternary UV LEDs

Physica Status Solidi (A) Applied Research

Volumn 201, Issue 12, 2004, Pages 2624-2627

  Akita, Katsushi ^a   Nakamura, Takao ^a   Hirayama, Hideki ^b  

^a SUMITOMO ELECTRIC INDUSTRIES LTD   (Japan)

^b RIKEN   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CATHODOLUMINESCENCE; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CURRENTS; LIGHT EMITTING DIODES; SAPPHIRE; SEMICONDUCTING INDIUM; SEMICONDUCTOR LASERS; ULTRAVIOLET RADIATION; EPITAXIAL GROWTH; GALLIUM NITRIDE; IMAGE ANALYSIS; SEMICONDUCTING INDIUM COMPOUNDS; ULTRAVIOLET DEVICES;

ACTIVE LAYER; DISLOCATION DENSITY; INJECTION CURRENT; THREADING DISLOCATIONS; EMISSION WAVELENGTHS; EPITAXIAL LATERALLY OVERGROWTH (ELOG); INJECTION CURRENTS;

GALLIUM NITRIDE; LIGHT EMITTING DIODES;

EID: 7044249518     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssa.200404980     Document Type: Conference Paper

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