Improvement on optical properties of GaN light-emitting diode with mesh-textured sapphire back delineated by laser scriber

IEEE Photonics Technology Letters

Volumn 21, Issue 7, 2009, Pages 477-479

  Lee, Ko Tae ^a   Lee, Yeeu Chang ^b   Chang, Jeng Yang ^c   Gong, Jeng ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b CHUNG YUAN CHRISTIAN UNIVERSITY   (Taiwan)

^c NATIONAL CENTRAL UNIVERSITY   (Taiwan)

Author keywords

Electroluminescence (EL); Laser scribe; Light emitting diode (LED); Mesh texture

Indexed keywords

COPPER LAYERS; GAN LIGHT-EMITTING DIODES; LIGHT EMITTING DIODE LEDS; LIGHT EXTRACTIONS; LIGHT-EMITTING DIODE (LED); LUMINOUS INTENSITIES; MESH-TEXTURE; NEW STRUCTURES; OPTICAL CHARACTERISTICS;

CORUNDUM; CURRENT DENSITY; DIODES; ELECTROLUMINESCENCE; GALLIUM ALLOYS; GALLIUM NITRIDE; LASERS; LIGHT; LIGHT EMISSION; OPTICAL PROPERTIES; SAPPHIRE; SEMICONDUCTING GALLIUM; SILVER; TEXTURES; TOOLS;

LIGHT EMITTING DIODES;

EID: 64249126303     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2009.2013726     Document Type: Article

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