A study of thick 3C-SiC epitaxial layers grown on 6H-SiC substrates by sublimation epitaxy in vacuum

Semiconductors

Volumn 41, Issue 3, 2007, Pages 263-265

  Lebedev, A A ^a   Zelenin, V V ^a   Abramov, P L ^a   Bogdanova, E V ^a   Lebedev, S P ^a   Nel'son, D K ^a   Razbirin, B S ^a   Shcheglov, M P ^a   Tregubova, A S ^a   Suvajarvi, M ^b   Yakimova, R ^b  

^a IOFFE INSTITUTE   (Russian Federation)

^b LINKÖPING UNIVERSITY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 33947397644     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/S1063782607030037     Document Type: Article

References (8)

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3. A. A. Lebedev, A. M. Strel'chuk, N. S. Savkina, et al., Fiz. Tekh. Poluprovodn. (St. Petersburg) 37, 499 (2003)
4. [Semiconductors 37, 482 (2003)].
5. N. S. Savkina, A. A. Lebedev, D. V. Davydov, et al., Mater. Sci. Eng. B 77, 50 (2000).
6. A. Suzuki, H. Matsunami, and T. Tanaka, J. Electrochem. Soc. 124, 241 (1977).
7. Properties of Advanced Semiconductor Materials: GaN, AlN, InN, BN, SiC, SiGe, Ed. by M. E. Levinshtein, S. L. Rumyantsev, and M. S. Shur (Wiley, New York, 2001).
8. H. Kuwabara, K. Yamanaka, and S. Yamada, Phys. Status Solidi A 37, K157 (1976).