Demonstration of defect-induced limitations on the properties of Au/3C-SiC Schottky barrier diodes

Solid State Phenomena

Volumn 156-158, Issue , 2009, Pages 331-336

  Eriksson, Jens ^a,b   Weng, Ming Hung ^a   Roccaforte, Fabrizio ^a   Giannazzo, Filippo ^a   Leone, Stefano ^c   Raineri, Vito ^a  

^a CNR IMM   (Italy)

^b UNIVERSITY OF CATANIA   (Italy)

^c LINKÖPING UNIVERSITY   (Sweden)

Author keywords

3C SiC; Conductive AFM; Schottky contacts; SiC heterostructure

Indexed keywords

ATOMIC FORCE MICROSCOPY; CURRENT VOLTAGE CHARACTERISTICS; DEFECTS; HETEROJUNCTIONS; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DIODES; SILICON CARBIDE; CAPACITANCE; GOLD COMPOUNDS; SILICON COMPOUNDS; WIDE BAND GAP SEMICONDUCTORS;

AFM; CAPACITANCE-VOLTAGE CHARACTERISTICS; CONDUCTIVE AFM; CONDUCTIVE ATOMIC FORCE MICROSCOPY; CONTACT AREAS; CONTACT RADIUS; CURRENT-VOLTAGE CHARACTERIZATION; DIODE PARAMETERS; ELECTRICAL CURRENT; HETEROSTRUCTURES; SCHOTTKY CONTACTS; SCHOTTKY DIODES; SIC SCHOTTKY DIODE; 3C-SIC;

SEMICONDUCTING SILICON COMPOUNDS; SCHOTTKY BARRIER DIODES;

EID: 75849130286     PISSN: 10120394     EISSN: None     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/SSP.156-158.331     Document Type: Conference Paper

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