The formation of 3C-SiC in crystalline Si by carbon implantation at 950°C and annealing - A structural study

Journal of Crystal Growth

Volumn 181, Issue 3, 1997, Pages 218-228

  Frangis, N ^a,b   Stoemenos, J ^a   Van Landuyt, J ^b   Nejim, A ^c   Hemment, P L F ^c  

^a ARISTOTLE UNIVERSITY OF THESSALONIKI   (Greece)

^b UNIVERSITY OF ANTWERP   (Belgium)

^c UNIVERSITY OF SURREY   (United Kingdom)

Author keywords

Electron microscopy; Implantation; Silicon carbide

Indexed keywords

ANNEALING; CARBON; CRYSTAL GROWTH; CRYSTAL LATTICES; CRYSTAL ORIENTATION; DISLOCATIONS (CRYSTALS); ION IMPLANTATION; NUCLEATION; SILICON CARBIDE; SURFACE STRUCTURE; THERMODYNAMIC STABILITY; TRANSMISSION ELECTRON MICROSCOPY;

MOIRE PATTERNS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0031268656     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(97)00278-9     Document Type: Article

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