Ion beam synthesis of SiC layers in SIMOX material

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 127-128, Issue , 1997, Pages 333-336

  Gotz B ^a   Lindner, J K N ^a   Stritzker, B ^a  

^a UNIVERSITY OF AUGSBURG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DIFFUSION IN SOLIDS; ELECTRIC INSULATION; EPITAXIAL GROWTH; ION BEAMS; ION IMPLANTATION; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICA; SILICON WAFERS; SYNTHESIS (CHEMICAL); THERMODYNAMIC STABILITY; TRANSMISSION ELECTRON MICROSCOPY;

ION BEAM SYNTHESIS; SEPARATION BY IMPLANTATION OF OXYGEN (SIMOX);

SILICON CARBIDE;

EID: 0031547645     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(96)00951-2     Document Type: Article

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