-
1
-
-
78049258400
-
Analysis of silicon via hole drilling for wafer level chip stacking by UV laser
-
Y. H. Lee and K. J. Choi, "Analysis of silicon via hole drilling for wafer level chip stacking by UV laser," Int. J. Precis. Eng. Manuf. 11 501-507 (2010)
-
(2010)
Int. J. Precis. Eng. Manuf.
, vol.11
, pp. 501-507
-
-
Lee, Y.H.1
Choi, K.J.2
-
2
-
-
34249662299
-
Implementation of three-dimesional SOI-MEMS wafer-level packaging using through-wafer interconnections
-
C. W. Lin, H. A. Yang, W. C. Wang and W. Fang, "Implementation of three-dimesional SOI-MEMS wafer-level packaging using through-wafer interconnections," J. Micromech. Microeng. 17 1200-1205 (2007)
-
(2007)
J. Micromech. Microeng.
, vol.17
, pp. 1200-1205
-
-
Lin, C.W.1
Yang, H.A.2
Wang, W.C.3
Fang, W.4
-
3
-
-
78149382470
-
Systematic optimization of process parameter in laser drilling of 200 μm photovoltaic silicon wafer using new kind of nanosecond IR laser
-
K. P. Stolberg, B. Kremser, S. Friedel and Y. Atsuta, "Systematic optimization of process parameter in laser drilling of 200 μm photovoltaic silicon wafer using new kind of nanosecond IR laser," J. Laser Micro/Nanoeng. 4, 231-233 (2009).
-
(2009)
J. Laser Micro/Nanoeng.
, vol.4
, pp. 231-233
-
-
Stolberg, K.P.1
Kremser, B.2
Friedel, S.3
Atsuta, Y.4
-
4
-
-
77949843066
-
Silicon-on-diamond material by pulsed laser technique
-
S. Lagomarsino, G. Parrini, S. Sciortino, M. Santoro, M. Citroni, M. Vannoni, A. Fossati, F. Gorelli, G. Molesini and A. Scorzoni, "Silicon-on-diamond material by pulsed laser technique," Appl. Phys. Lett. 96, 031901 (2010).
-
(2010)
Appl. Phys. Lett.
, vol.96
, pp. 31901
-
-
Lagomarsino, S.1
Parrini, G.2
Sciortino, S.3
Santoro, M.4
Citroni, M.5
Vannoni, M.6
Fossati, A.7
Gorelli, F.8
Molesini, G.9
Scorzoni, A.10
-
5
-
-
84883538710
-
New prospectives for the silicon-on-diamond material
-
S. Lagomarsino, G. Parrini, S. Sciortino, A. Fossati, M. Citroni, G. Ferrari, F. Gorelli, M. Santoro, G. Molesini, M. Vannoni, A. Marras, A. Scorzoni, A. Ranieri, L. Berdondini, F. Brandi, R. Carzino, A. Diaspro, M. Scotto, and B. Torre, "New prospectives for the silicon-on-diamond material," Proceedings of Science RD09, 029 (2009).
-
(2009)
Proceedings of Science RD09
, vol.29
-
-
Lagomarsino, S.1
Parrini, G.2
Sciortino, S.3
Fossati, A.4
Citroni, M.5
Ferrari, G.6
Gorelli, F.7
Santoro, M.8
Molesini, G.9
Vannoni, M.10
Marras, A.11
Scorzoni, A.12
Ranieri, A.13
Berdondini, L.14
Brandi, F.15
Carzino, R.16
Diaspro, A.17
Scotto, M.18
Torre, B.19
-
6
-
-
34547663219
-
Nd-YAG laser microvia drilling for interconnection application
-
B. Tan and K. Venkatakrishnan, "Nd-YAG laser microvia drilling for interconnection application," J. Micromech. Microeng. 17, 1511-1517 (2007).
-
(2007)
J. Micromech. Microeng.
, vol.17
, pp. 1511-1517
-
-
Tan, B.1
Venkatakrishnan, K.2
-
7
-
-
63649097739
-
High repetition rate femtosecond laser forming sub-10μm diameter interconnection vias
-
B. Tan, S. Panchatsharam and K. Venkatakrishnan, "High repetition rate femtosecond laser forming sub-10μm diameter interconnection vias," J. Phys. D: Appl. Phys. 42, 065102 (2009).
-
(2009)
J. Phys. D: Appl. Phys.
, vol.42
, pp. 65102
-
-
Tan, B.1
Panchatsharam, S.2
Venkatakrishnan, K.3
-
8
-
-
29144435323
-
Deep micro hole drilling in a silicon substrate using multi-bursts of nanosecond UV laser pulses
-
B. Tan, "Deep micro hole drilling in a silicon substrate using multi-bursts of nanosecond UV laser pulses," J. Micromech. Microeng. 16, 109-112 (2006).
-
(2006)
J. Micromech. Microeng.
, vol.16
, pp. 109-112
-
-
Tan, B.1
-
9
-
-
77952694511
-
Structuring materials with nanosecond laser pulses
-
S. T. Hendow and S. A. Shakir, "Structuring materials with nanosecond laser pulses," Opt. Express 18, 10188- 10199 (2010).
-
(2010)
Opt. Express
, vol.18
, pp. 10188-10199
-
-
Hendow, S.T.1
Shakir, S.A.2
-
10
-
-
0000835157
-
Ultraviolet laser ablation of polymers: Spot size, pulse duration, and plume attenuation effects explained
-
H. Schmidt, J. Ihlemann, B. Wolff-Rottke, K. Luther and J. Troe, "Ultraviolet laser ablation of polymers: spot size, pulse duration, and plume attenuation effects explained," J. Appl. Phys. 83, 5458-5468 (1998).
-
(1998)
J. Appl. Phys.
, vol.83
, pp. 5458-5468
-
-
Schmidt, H.1
Ihlemann, J.2
Wolff-Rottke, B.3
Luther, K.4
Troe, J.5
-
11
-
-
84893993640
-
High precision drilling of ceramics
-
"High precision drilling of ceramics," Highlights LambdaPhysik 34, 2-5 (1992).
-
(1992)
Highlights LambdaPhysik
, vol.34
, pp. 2-5
-
-
-
12
-
-
0000534262
-
Influence of beam spot size on ablation rates in pulsed-laser processing
-
M. Eyett and D. Bauerle, "Influence of beam spot size on ablation rates in pulsed-laser processing," Appl. Phys. Lett. 51, 2054-2055 (1987).
-
(1987)
Appl. Phys. Lett.
, vol.51
, pp. 2054-2055
-
-
Eyett, M.1
Bauerle, D.2
-
13
-
-
10844278394
-
Experimental investigation of ablation efficiency and plasma expansion during femtosecond and nanosecond laser ablation of silicon
-
X. Zeng, X. L. Mao, R. Greif and R. E. Russo, "Experimental investigation of ablation efficiency and plasma expansion during femtosecond and nanosecond laser ablation of silicon," Appl. Phys. A 80, 237-241 (2005).
-
(2005)
Appl. Phys. A
, vol.80
, pp. 237-241
-
-
Zeng, X.1
Mao, X.L.2
Greif, R.3
Russo, R.E.4
-
14
-
-
0000494824
-
Laser plasma interaction at an early stage of laser ablation
-
Y. F. Lu, M. H. Hong and T. S. Low, "Laser plasma interaction at an early stage of laser ablation," J. Appl. Phys. 85, 2899-2903 (1999).
-
(1999)
J. Appl. Phys.
, vol.85
, pp. 2899-2903
-
-
Lu, Y.F.1
Hong, M.H.2
Low, T.S.3
-
15
-
-
79956041274
-
Delayed phase explosion during high-power nanosecond laser ablation of silicon
-
Q. Lu, S. S. Mao, X. Mao and E. Russo, "Delayed phase explosion during high-power nanosecond laser ablation of silicon," Appl. Phys. Lett. 80, 3072-3074 (2002).
-
(2002)
Appl. Phys. Lett.
, vol.80
, pp. 3072-3074
-
-
Lu, Q.1
Mao, S.S.2
Mao, X.3
Russo, E.4
-
16
-
-
0000775563
-
Explosive change in crater properties during high power nanosecond laser ablation of silicon
-
J. H. Yoo, S. H. Jeong, R. Greif and E. Russo, "Explosive change in crater properties during high power nanosecond laser ablation of silicon," J. Appl. Phys. 88, 1638-1649 (2000).
-
(2000)
J. Appl. Phys.
, vol.88
, pp. 1638-1649
-
-
Yoo, J.H.1
Jeong, S.H.2
Greif, R.3
Russo, E.4
|