Thickness effects of Bi0.89Ti0.11FeO3 thin films deposited on PbZr0.2Ti0.79Nb0.01O 3 buffer layers

Journal of Alloys and Compounds

Volumn 509, Issue 2, 2011, Pages 431-434

  Chen, X M ^a   Hu, G D ^a   Wang, J C ^a   Cheng, L ^a   Yang, C H ^a   Wu, W B ^a  

^a UNIVERSITY OF JINAN   (China)

Author keywords

Chemical synthesis; Electronic properties; Ferroelectrics; Thin films

Indexed keywords

ANTI-AGING; BACKSWITCHING; CHEMICAL SYNTHESIS; COERCIVE FIELD; FATIGUE-FREE CHARACTERISTICS; FERROELECTRICS; HIGH BREAKDOWN; INSULATING PROPERTIES; METAL ORGANIC DECOMPOSITION; P-E HYSTERESIS LOOPS; PT(111); REMNANT POLARIZATIONS; SI SUBSTRATES; THICKNESS EFFECT;

BUFFER LAYERS; DECOMPOSITION; ELECTRONIC PROPERTIES; EPITAXIAL LAYERS; HYSTERESIS; HYSTERESIS LOOPS; LEAKAGE CURRENTS; OPTICAL WAVEGUIDES; ORGANOMETALLICS; PLATINUM; SYNTHESIS (CHEMICAL); VAPOR DEPOSITION;

IRON OXIDES;

EID: 78149284426     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2010.09.049     Document Type: Article

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