Substitution of Nb doping on the structural, microstructural and electrical properties in PZT films

Thin Solid Films

Volumn 423, Issue 2, 2003, Pages 235-242

  Haccart, T ^a   Remiens, D ^a   Cattan, E ^a  

^a UNIVERSITÉ DE VALENCIENNES   (France)

Author keywords

Dielectric properties; Ferroelectric properties; Nb doped PZT materials; Piezoelectric properties; Sputtering properties; Thin film ceramics

Indexed keywords

CERAMIC MATERIALS; CRYSTAL STRUCTURE; ELECTROMAGNETIC WAVE POLARIZATION; FERROELECTRICITY; MICROELECTROMECHANICAL DEVICES; PIEZOELECTRICITY; SEMICONDUCTOR DOPING; SPUTTERING;

FERROELECTRIC PROPERTIES;

THIN FILMS;

EID: 0037439584     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(02)01045-3     Document Type: Article

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