Electronic properties of sulfur passivated undoped-n + type GaAs surface studied by photoreflectance

Applied Surface Science

Volumn 218, Issue 1-4, 2003, Pages 211-215

  Jin, Peng ^a   Pan, S H ^b   Li, Y G ^b   Zhang, C Z ^b   Wang, Z G ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

^b NANKAI UNIVERSITY   (China)

Author keywords

Complex Fourier transformation; Franz Keldysh oscillations; Sulfur passivation; Undoped n + type GaAs

Indexed keywords

FOURIER TRANSFORMS; LIGHT REFLECTION; OSCILLATIONS; OXIDATION; PASSIVATION; SULFUR;

COMPLEX FOURIER TRANSFORMATION (CFT);

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0041692861     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(03)00589-0     Document Type: Article

References (15)

1. Sandroff C.J., Nottenburg R.N., Bischoff J.-C., Bhat R. Appl. Phys. Lett. 51:1987;33.
2. Cowans B.A., Dardas Z., Delgass W.N., Carpenter M.S., Melloch M.R. Appl. Phys. Lett. 54:1989;365.
3. Paget D., Bonnet J.E., Berkovits V.L., Chiaradia P., Avila J. Phys. Rev. B. 53:1996;4604 Paget D., Gusev A.O., Berkovits V.L. Phys. Rev. B. 53:1996;4615.
4. Paget D., Bonnet J.E., Berkovits V.L., Chiaradia P., Avila J. Phys. Rev. B. 53:1996;4604 Paget D., Gusev A.O., Berkovits V.L. Phys. Rev. B. 53:1996;4615.
5. Jeng M.-J., Wang H.-T., Chang L.-B., Cheng Y.-C., Chou S.-T. J. Appl. Phys. 86:1999;6261.
6. Conrad S., Mullins D.R., Xin Q.-S., Zhu X.-Y. Appl. Surf. Sci. 107:1996;145.
7. Ohno T. Phys. Rev. B. 44:1991;6306.
8. Ohno T. Surf. Sci. 255:1991;229.
9. Ow K.N., Wang X.W. Phys. Rev. B. 54:1996;17661.
10. Bessolov V.N., Lebedev M.V., Ivankov A.F., Bauhofer W., Zahn D.R.T. Appl. Surf. Sci. 133:1998;17.
11. Lebedev M.V., Aono M. J. Appl. Phys. 87:2000;289.
12. Van Hoof C., Deneffe K., De boeck J., Arent D.J., Borghs G. Appl. Phys. Lett. 54:1989;608.
13. Shen H., Dutta M. J. Appl. Phys. 78:1995;2151.
14. Jin P., Pan S.H., Liang J.B. J. Appl. Phys. 88:2000;6429.
15. Yin X., Chen H.-M., Pollak F.H., Chan Y., Montano P.A., Kirchner P.D., Pettit G.D., Woodall J.M. J. Vac. Sci. Technol. A. 10:1992;131.