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Volumn 20, Issue 44, 2010, Pages 9982-9987

Ultra-long bismuth telluride nanoribbons synthesis by lithographically patterned galvanic displacement

(11) Jung, Hyunsung a Rheem, Youngwoo a Chartuprayoon, Nicha a Lim, Jae Hong b Lee, Kyu Hwan b Yoo, Bongyoung c Lee, Kun Jae c Choa, Yong Ho c Wei, Peng d Shi, Jing d Myung, Nosang V a

a University of California Riverside (United States)

b Korea Institute of Material Science (South Korea)

c Hanyang University (South Korea)

d UNIVERSITY OF CALIFORNIA (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BATCH SYNTHESIS; BISMUTH TELLURIDE; BULK COUNTERPART; CRYSTALLINITIES; DEPOSITION CONDITIONS; DIELECTRIC LAYER; ELECTRICAL RESISTIVITY; FIELD EFFECTS; GALVANIC DISPLACEMENT; HIGH-RESOLUTION TEM; INTERMETALLIC COMPOUNDS; N-TYPE SEMICONDUCTORS; NANORIBBONS; POLYCRYSTALLINE; POWER FACTORS; RHOMBOHEDRAL STRUCTURES; SELECTED AREA ELECTRON DIFFRACTION; SIZE EFFECTS; SURFACE BOUNDARIES; THERMOELECTRIC PROPERTIES; TRAPPED CHARGE; WAFER LEVEL;

BISMUTH; CARRIER MOBILITY; ELECTRIC CONDUCTIVITY; ELECTRIC POWER FACTOR; FAST FOURIER TRANSFORMS; INTERMETALLICS;

BISMUTH COMPOUNDS;

EID: 78049379189 PISSN: 09599428 EISSN: 13645501 Source Type: Journal
DOI: 10.1039/c0jm02058c Document Type: Article

Times cited : (23)

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