A new seeding and electroless approach to alloying, direct patterning, and self-forming barriers for Cu thin-film nanostructures

Electrochemistry Communications

Volumn 12, Issue 11, 2010, Pages 1483-1486

  Chen, G S ^a   Chen, S T ^b   Lu, Y L ^a  

^a FENG CHIA UNIVERSITY   (Taiwan)

^b HSIUPING INSTITUTE OF TECHNOLOGY   (Taiwan)

Author keywords

Cu Mn; Electroless deposition; Seeding; Self formed barrier; Thin films

Indexed keywords

ADVANCED TECHNOLOGY; ATOMIC LAYER; ATOMIC PERCENTAGE; CU-MN; DIELECTRIC LAYER; DIRECT-PATTERNING; ELECTROLESS; ELECTROLESS DEPOSITION; INTERFACIAL LAYER; SEEDING; SEEDING PROCESS; SELF-FORMED BARRIER; SITE SELECTIVE; SYNCHROTRON X RAYS;

ALLOYING; ATOMIC SPECTROSCOPY; DEPOSITION; MANGANESE; MANGANESE COMPOUNDS; NANOSTRUCTURES; SILICON COMPOUNDS; THIN FILMS; VAPOR DEPOSITION; X RAY SPECTROSCOPY;

COPPER;

EID: 78049307522     PISSN: 13882481     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.elecom.2010.08.012     Document Type: Article

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