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Physics Letters, Section A: General, Atomic and Solid State Physics

Volumn 374, Issue 48, 2010, Pages 4880-4884

Single electron transistor with programmable tunnelling structure

(7) Zhang, X A a Chi, Y Q a Fang, J Y a Zhong, H Q a Chang, S L a Fang, L a Qin, S Q a

a NATIONAL UNIVERSITY OF DEFENSE TECHNOLOGY (China)

Author keywords

Mesoporous silica thin film; Room temperature; Single electron transistor

Indexed keywords

CAPACITANCE MEASUREMENT; GOLD NANOPARTICLES; SILICA; THIN FILMS;

COULOMB OSCILLATION; MESOPOROUS SILICA THIN FILMS; NANO-DOT ARRAYS; ORDERED MESOPOROUS SILICAS;

SINGLE ELECTRON TRANSISTORS;

EID: 78049288579 PISSN: 03759601 EISSN: None Source Type: Journal
DOI: 10.1016/j.physleta.2010.10.001 Document Type: Article

Times cited : (9)

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