Preparation of silicon oxycarbide films by laser ablation of SiO/3C-SiC multicomponent targets

Applied Surface Science

Volumn 257, Issue 5, 2010, Pages 1703-1706

  Wang, C B ^a   Goto, T ^b   Tu, R ^b   Zhang, L M ^a  

^a WUHAN UNIVERSITY OF TECHNOLOGY   (China)

^b TOHOKU UNIVERSITY   (Japan)

Author keywords

Laser ablation; Multicomponent targets; SiOC films

Indexed keywords

ABLATION; AMORPHOUS FILMS; AMORPHOUS SILICON; EPITAXIAL GROWTH; LASER ABLATION; MIXING; SILICON CARBIDE; SILICON COMPOUNDS; SILICON OXIDES;

AMORPHOUS SILICON OXYCARBIDE; AS-DEPOSITED FILMS; FILM COMPOSITION; MIXING RATIOS; MULTICOMPONENTS; SI-O-C BOND; SILICON OXYCARBIDES; SIOC FILM;

FILM PREPARATION;

EID: 78049274862     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2010.08.127     Document Type: Article

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