Amorphous silicon carbon nitride films grown by the pulsed laser deposition of a SiC-Si3N4 mixed target

ETRI Journal

Volumn 26, Issue 3, 2004, Pages 257-261

  Park, Nae Man ^a   Kim, Sang Hyeob ^a   Sung, Gun Yong ^a  

^a Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

Author keywords

Mixed target; PLD; SiCN

Indexed keywords

BINDING ENERGY; CARBON NITRIDE; CHARGE TRANSFER; COMPACTION; COMPOSITION; EXCIMER LASERS; KINETIC ENERGY; LASER ABLATION; OXIDATION; PULSED LASER DEPOSITION; SILICON CARBIDE; SILICON NITRIDE; STOICHIOMETRY;

ELECTRONEGATIVITY; LASER ENERGY; MIXED TARGET; SILICON CARBIDE NITRIDE FILMS;

AMORPHOUS FILMS;

EID: 3042658537     PISSN: 12256463     EISSN: None     Source Type: Journal    
DOI: 10.4218/etrij.04.0103.0054     Document Type: Article

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