|
|
Volumn 88, Issue 1, 2011, Pages 64-71
|
|
Combined use of three-dimensional X-ray diffraction imaging and micro-Raman spectroscopy for the non-destructive evaluation of plasma arc induced damage on silicon wafers
|
|
Author keywords
3D X ray diffraction imaging; Micro Raman spectroscopy; Plasma arc damage; Silicon; Synchrotron X ray topography
|
|
Indexed keywords
3-D IMAGE;
3D X-RAY DIFFRACTION;
ANALYSIS PROCESS;
ARCING DAMAGE;
CRYSTALLINE AND AMORPHOUS SILICON;
DISLOCATION CELL STRUCTURES;
FAILURE MECHANISM;
HIGH YIELD;
IC MANUFACTURING;
INDUCED DAMAGE;
INTEGRAL PART;
INTERNAL DAMAGES;
K-MEANS CLUSTERING;
LOW TEMPERATURES;
MICRO RAMAN SPECTROSCOPY;
NON DESTRUCTIVE;
NON DESTRUCTIVE EVALUATION;
NON-CONTACT;
NON-UNIFORMITIES;
PHYSICAL PROCESS;
PLASMA ARC;
PLASMA ARC DAMAGE;
PLASMA ARCING;
PLASMA INDUCED DAMAGE;
PLASMA PROCESSING;
PROCESS CAPABILITIES;
REGIONS OF INTEREST;
SEM;
STRAIN FIELDS;
STRAIN LEVELS;
SYNCHROTRON X RAYS;
SYNCHROTRON X-RAY TOPOGRAPHY;
WAFER SURFACE;
X-RAY DIFFRACTION IMAGING;
AMORPHOUS SILICON;
CLUSTERING ALGORITHMS;
DIFFRACTION;
ELECTRIC ARCS;
INTEGRATED CIRCUITS;
PLASMA ETCHING;
PLASMAS;
PRODUCTION ENGINEERING;
RAMAN SCATTERING;
RAMAN SPECTROSCOPY;
SCANNING ELECTRON MICROSCOPY;
SEMICONDUCTING INDIUM COMPOUNDS;
SEMICONDUCTING SILICON COMPOUNDS;
SILICON WAFERS;
STRAIN;
SYNCHROTRONS;
X RAY DIFFRACTION;
X RAYS;
THREE DIMENSIONAL;
|
|
EID: 78049252773
PISSN: 01679317
EISSN: None
Source Type: Journal
DOI: 10.1016/j.mee.2010.08.022 Document Type: Article |
|
Times cited : (6)
|
|
References (33)
|
