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Volumn 157, Issue 6, 2010, Pages

Wet chemical etching of Si, Si1-x Gex, and Ge in HF: H2 O2: CH3 COOH

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL ETCHING; ETCH RATES; ETCHING METHOD; GE CONTENT; HETEROSTRUCTURES; MOLE FRACTION; SELECTIVE REMOVAL; STRAINED LAYERS; WET-CHEMICAL ETCHING;

ACETIC ACID; CARRIER MOBILITY; HYDROFLUORIC ACID; HYDROGEN PEROXIDE; SILICON; SILICON ALLOYS; WET ETCHING;

GERMANIUM;

EID: 77958535827 PISSN: 00134651 EISSN: None Source Type: Journal
DOI: 10.1149/1.3382944 Document Type: Article

Times cited : (45)

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